mt200dt18l2 document number: s-m0066 www. apt-semi .com rev.1.0, may.31, 2013 1 module type diode maximum ratings symbol item conditions values units i d output current(d.c.) tc=96 three phase full wave 200 a i fsm surge forward current t=10ms tvj =45 1900 a i 2 t circuit fusing consideration 18050 a 2 s visol isolation breakdown voltage(r.m.s) a.c.50hz;r.m.s.;1min 3000 v tvj operating junction temperature -40 to +150 tstg storage temperature -40 to +125 mt mounting torque to terminals(m4) 215% nm mt to terminals(m6) 5 15% nm ms to heatsink(m6) 5 15% nm weight module approximately 320 g thermal characteristics symbol item conditions values units r th(j-c) thermal impedance, max. junction to case(total) 0.12 /w rth(c-s) thermal impedance, max. case to heat sink 0.06 /w electrical characteristics circuit + - r s t r2 g three phase bridge + thyristor v rrm / v drm 800 to 1800v i f a v / i t a v 200am p type v rrm / v drm v rsm mt200dt08l2 mt200dt12l2 mt200dt16l2 MT200DT18T2 800v 1200v 1600v 1800v 900v 1300v 1700v 1900v features y blocking voltage:800 to 1800v y three phase bridge and a thyristor y low forward voltage applications y inverter for ac or dc motor control y current stablilzed power supply y switching power supply y ul recognized applied for file no. e360040 symbol item conditions values units v fm forward voltage drop, max. t=25 i f =200a 1.35 v i rrm repetitive peak reverse current, max. t vj =25 v rd =v rrm t vj =150 v rd =v rrm 2 10 ma ma
mt200dt18l2 document number: s-m0066 www. apt-semi .com rev.1.0, may.31, 2013 2 thyristor maximum ratings electrical and thermal characteristics symbol item conditions values units i tav average on-state current tc=93 , single phase half wave 180 o conduction 200 a i tsm surge on-state current tvj=45 t=10ms (50hz), sine vr=0 1900 a i 2 t circuit fusing consideration 18050 a 2 s visol isolation breakdown voltage(r.m.s) a.c.50hz;r.m.s.;1 min 3000 v tvj operating junction temperature -40 to +125 tstg storage temperature -40 to +125 mt mounting torque to terminals(m4) 215% nm mt to terminals(m6) 515% ms to heatsink(m6) 515% nm di/dt critical rate of rise of on-state current t vj =t vjm , v d =1/2v drm ,i g =100ma d ig /d t =0.1a/ s 200 a/ s dv/dt critical rate of rise of off-state voltage, min. t j =t vjm ,v d =2/3v drm ,linear voltage rise 500 v/ s symbol item conditions values units min. typ. max. v tm peak on-state voltage, max. t=25 i t =200a 1.40 v i rrm /i drm repetitive peak reverse current, max. / repetitive peak off-state current, max. t vj =t vjm ,v r =v rrm ,v d =v drm 100 ma v gt gate trigger voltage, max. t vj =25 , v d =6v 3 v i gt gate trigger current, max. t vj =25 , v d =6v 150 ma rth(j-c) thermal impedance, max. junction to case 0.14 /w rth(c-s) thermal impedance, max. case to heatsink 0.06 /w
mt200dt18l2 document number: s-m0066 www. apt-semi .com rev.1.0, may.31, 2013 3 performance curves fi g 1. power dissi p ation fig2. forward current derating curve fig3. transient thermal impedance fig4. max non-repetitive forward surge current fig5. forward characteristics 0.001 t 0.01 0.1 1.0 10 s 100 0.20 / w 0.10 0 z th(j- c ) 1 10 cycles 100 50hz 2500 a 2000 1500 1000 500 0 0.5 v f 1.0 1.5 2.0 v 2.5 1000 a 100 i f 10 max . tj=25 0 tc 50 100 150 250 a 200 150 100 50 0 i d fi g 6. scr power dissi p ation single phase half wave tj=25 start per one element three phase 0 i d 40 80 120 160 a 200 550 500 w 400 300 200 100 p vtot 0 three phase 250 w 200 150 100 50 p tav 0 0 i d 40 80 120 160 a 200
mt200dt18l2 document number: s-m0066 www. apt-semi .com rev.1.0, may.31, 2013 4 p e a k g a t e p o w e r ( 1 0 w ) a v e r a g e g a t e p o w e r ( 3 w ) fig7. scr forward current derating curve fig8. scr transient thermal impedance 0 tc 50 100 150 250 a 200 150 100 50 0 i tavm 0.001 t 0.01 0.1 1.0 10 s 100 0.20 / w 0.10 0 z th(j- c ) fig9. scr forward characteristics 0.5 v tm 1.0 1.5 2.0 v 2.5 max . 1000 a 100 i t 10 tj=25 fig10. gate trigger characteristics max. 10 1 i g 10 2 10 3 ma 10 4 peak forward gate voltage (10v) 10 2 v 10 1 10 0 v g 0.1 maximum gate non-trigger voltage 25 -10 135 peak gate current (3a)
mt200dt18l2 document number: s-m0066 www. apt-semi .com rev.1.0, may.31, 2013 5 package outline information case: l2 dimensions in mm
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